Study of Electronic Properties of Metal-Insulator-Metal Structures for Fabrication of Cold Cathodes

Abstract

Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF₂-Au and comparison with other Au-SiO/CeF₃-Au, Cu-CeF₃-Cu, Cu-SiO-Cu, Au-CeF₃-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF₂-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.