Study of Au/n-Ti₂S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation Modeling

Abstract

The Au/n-Ti₂S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti₂S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the interface state density is lower than 10¹⁰ cm^-2.V^-1. As the thickness of the emitter increased, both short-current density (J) and the conversion efficiency were decreased. The dependence of J-V characteristics of the Au/n-Ti₂S/p-Si/Al heterojunction solar cell on Front and back Surface Recombination Velocity (SRV) was studied. By optimizing the initial parameters set, the Au/n-Ti₂S/p-Si/Al solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.834, V_oc: 0.666 V, J_sc: 39.39 mA/cm²).