Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping
Abstract
The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs1-xNx structure. The decrease of the activation energies with increasing silicon content was observed.
DOI: https://doi.org/10.3844/ajassp.2007.19.22
Copyright: © 2007 N. Ben Sedrine, A. Hamdouni, J. Rihani, S. Ben Bouzid, F. Bousbih, J.C. Harmand and R. Chtourou. This is an open access article distributed under the terms of the
Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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Keywords
- GaAs¹1-xNx
- molecular beam epitaxy
- photoluminescence spectroscopy
- Si-doping
- deep defects